Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs

Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this work, a new MOSFETs characterization method utilizing in-wafer Kelvin contact device structure is developed. The developed method can eliminate the parasitic series resistances in MOSFETs and allows us to characterize the short channel transistor intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. The developed analysis is useful for the characterization and parameter extractions of fabricated MOSFETs for the device/process development and optimization of ultra-thin gate insulator short channel CMOS LSIs for higher performance.

Original languageEnglish
Title of host publication2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Pages155-159
Number of pages5
DOIs
Publication statusPublished - 2008 Sep 15
Event2008 IEEE Conference on Microelectronic Test Structures, ICMTS - Edinburgh, United Kingdom
Duration: 2008 Mar 242008 Mar 27

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Country/TerritoryUnited Kingdom
CityEdinburgh
Period08/3/2408/3/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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