Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Tsunehisa Sakoda, Keita Nishigaya, Tomohiro Kubo, Mitsuaki Hori, Hiroshi Minakata, Yuko Kobayashi, Hiroko Mori, Katsuji Ono, Katsuto Tanahashi, Naoyoshi Tamura, Toshifumi Mori, Yoshiharu Tosaka, Hideya Matsuyama, Chioko Kaneta, Koichi Hashimoto, Masataka Kase, Yasuo Nara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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Engineering & Materials Science