Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Tsunehisa Sakoda, Keita Nishigaya, Tomohiro Kubo, Mitsuaki Hori, Hiroshi Minakata, Yuko Kobayashi, Hiroko Mori, Katsuji Ono, Katsuto Tanahashi, Naoyoshi Tamura, Toshifumi Mori, Yoshiharu Tosaka, Hideya Matsuyama, Chioko Kaneta, Koichi Hashimoto, Masataka Kase, Yasuo Nara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages379-384
Number of pages6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2010 May 22010 May 6

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period10/5/210/5/6

Keywords

  • Charge pumping
  • Component
  • Dit
  • Flash lamp annealing
  • Gate current fluctuation
  • Laser annealing
  • Millisecond-anneal
  • SRAM reliability
  • V

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Sakoda, T., Nishigaya, K., Kubo, T., Hori, M., Minakata, H., Kobayashi, Y., Mori, H., Ono, K., Tanahashi, K., Tamura, N., Mori, T., Tosaka, Y., Matsuyama, H., Kaneta, C., Hashimoto, K., Kase, M., & Nara, Y. (2010). Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 379-384). [5488801] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488801