Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Masaki Hirayama, Akinobu Teramoto, Shin Saito, Migaku Takahashi, Tadahiro Ohmi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

MgZnO (magnesium-zinc-oxide) films were grown on (11-20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave-excited plasma. Structural, electrical and optical properties were investigated by X-ray diffraction, atomic force microscope, Hall, transmittance and photoluminescence measurement. The c-axis lattice constant decreases proportionally to an increase in the Mg content of MgxZn1 - xO films. Therefore, this indicates that Mg atoms can be substituted in the Zn sites. Mg contents in films on ZnO substrates increase up to 0.11. In addition, Ga doped ZnO films were grown on (11-20) sapphire substrates. The resistivity of the films on (11-20) sapphire is controlled between 1.2 × 10- 3 Ω cm to 1 Ω cm by changing the process conditions. The overall results indicate the promising potential of this PE-MOCVD method for related (Zn, Mg)O films formation because of the reactivity of the radicals, such as oxygen radicals (O*).

Original languageEnglish
Pages (from-to)2953-2956
Number of pages4
JournalThin Solid Films
Volume518
Issue number11
DOIs
Publication statusPublished - 2010 Mar 31

Keywords

  • Gallium doped zinc oxide
  • Magnesium-zinc-oxide
  • Modulation of band gap
  • Plasma enhanced metal-organic chemical vapor deposition
  • Substitution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this