@inproceedings{331167d3f5614571aab5515fc0e0c67e,
title = "Characterization of metal Schottky junction for In0.53Ga 0.47As substrates",
abstract = "The metal/InGaAs Schottky devices with Ni, TiN and Ni/Si (stacked) were fabricated. J-V and C-V characteristics were measured and Schottky barrier height (φBp) was calculated. It is shown that by using Ni/Si stacked structure a larger and more stable barrier height φBp can be achieved which is not affected by an annealing temperature up to 500°C.",
author = "R. Hosoi and Y. Suzuki and D. Zadeh and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",
year = "2012",
doi = "10.1149/1.3694349",
language = "English",
isbn = "9781607683186",
series = "ECS Transactions",
number = "1",
pages = "417--421",
booktitle = "China Semiconductor Technology International Conference 2012, CSTIC 2012",
edition = "1",
note = "China Semiconductor Technology International Conference 2012, CSTIC 2012 ; Conference date: 18-03-2012 Through 19-03-2012",
}