Characterization of metal Schottky junction for In0.53Ga 0.47As substrates

R. Hosoi; Y. Suzuki; D. Zadeh; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3694349

Characterization of metal Schottky junction for In_0.53Ga _0.47As substrates

R. Hosoi, Y. Suzuki, D. Zadeh, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The metal/InGaAs Schottky devices with Ni, TiN and Ni/Si (stacked) were fabricated. J-V and C-V characteristics were measured and Schottky barrier height (φ_Bp) was calculated. It is shown that by using Ni/Si stacked structure a larger and more stable barrier height φ_Bp can be achieved which is not affected by an annealing temperature up to 500°C.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2012, CSTIC 2012
Publisher	Electrochemical Society Inc.
Pages	417-421
Number of pages	5
Edition	1
ISBN (Electronic)	9781607683186
ISBN (Print)	9781607683186
DOIs	https://doi.org/10.1149/1.3694349
Publication status	Published - 2012
Externally published	Yes
Event	China Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China Duration: 2012 Mar 18 → 2012 Mar 19

Publication series

Name	ECS Transactions
Number	1
Volume	44
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	China Semiconductor Technology International Conference 2012, CSTIC 2012
Country/Territory	China
City	Shanghai
Period	12/3/18 → 12/3/19

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3694349

Cite this

Hosoi, R., Suzuki, Y., Zadeh, D., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Characterization of metal Schottky junction for In_0.53Ga _0.47As substrates. In China Semiconductor Technology International Conference 2012, CSTIC 2012 (1 ed., pp. 417-421). (ECS Transactions; Vol. 44, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3694349

Characterization of metal Schottky junction for In_0.53Ga _0.47As substrates. / Hosoi, R.; Suzuki, Y.; Zadeh, D.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

China Semiconductor Technology International Conference 2012, CSTIC 2012. 1. ed. Electrochemical Society Inc., 2012. p. 417-421 (ECS Transactions; Vol. 44, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosoi, R, Suzuki, Y, Zadeh, D, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2012, Characterization of metal Schottky junction for In_0.53Ga _0.47As substrates. in China Semiconductor Technology International Conference 2012, CSTIC 2012. 1 edn, ECS Transactions, no. 1, vol. 44, Electrochemical Society Inc., pp. 417-421, China Semiconductor Technology International Conference 2012, CSTIC 2012, Shanghai, China, 12/3/18. https://doi.org/10.1149/1.3694349

Hosoi, R. ; Suzuki, Y. ; Zadeh, D. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Tsutsui, K. ; Natori, K. ; Hattori, T. ; Iwai, H. / Characterization of metal Schottky junction for In_0.53Ga _0.47As substrates. China Semiconductor Technology International Conference 2012, CSTIC 2012. 1. ed. Electrochemical Society Inc., 2012. pp. 417-421 (ECS Transactions; 1).

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abstract = "The metal/InGaAs Schottky devices with Ni, TiN and Ni/Si (stacked) were fabricated. J-V and C-V characteristics were measured and Schottky barrier height (φBp) was calculated. It is shown that by using Ni/Si stacked structure a larger and more stable barrier height φBp can be achieved which is not affected by an annealing temperature up to 500°C.",

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