Characterization of metal-gate FinFET variability based on measurements and compact model analyses

S. O'Uchi, T. Matsukawa, T. Nakagawa, K. Endo, Y. X. Liu, T. Sekigawa, J. Tsukada, Y. Ishikawa, H. Yamauchi, K. Ishii, E. Suzuki, H. Koike, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of- the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V th variation of the MG FinFETs was analyzed into structure-based (77Si, ZG) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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