Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films

Ryoichi Saotome, Naoki Wakiya, Takanori Kiguchi, Jeffrey S. Cross, Osamu Sakurai, Kazuo Shinozaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Original languageEnglish
Title of host publicationElectroceramics in Japan XIV
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783037851821
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795


  • Chemical vapor deposition
  • Gadolinia doped ceria
  • Solid oxide fuel cell

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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