Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films

Ryoichi Saotome; Naoki Wakiya; Takanori Kiguchi; Jeffrey S. Cross; Osamu Sakurai; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.485.133

Characterization of low temperature chemical vapor deposited Gd ₂O₃ doped CeO₂ films

Ryoichi Saotome, Naoki Wakiya, Takanori Kiguchi, Jeffrey S. Cross, Osamu Sakurai, Kazuo Shinozaki

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Highly oriented and polycrystalline Gd₂O₃ doped CeO₂ thin films were prepared on α-Al₂O ₃(0001) substrates by chemical vapor deposition, using Ce(C ₅H₄C₂H₅)₃ and Gd(C ₅H₄C₂H₅)₃ as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Original language	English
Title of host publication	Electroceramics in Japan XIV
Publisher	Trans Tech Publications Ltd
Pages	133-136
Number of pages	4
ISBN (Print)	9783037851821
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.485.133
Publication status	Published - 2011

Publication series

Name	Key Engineering Materials
Volume	485
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Keywords

Chemical vapor deposition
Gadolinia doped ceria
Solid oxide fuel cell

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.485.133

Cite this

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title = "Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films",

abstract = "Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.",

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language = "English",

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AU - Saotome, Ryoichi

AU - Wakiya, Naoki

AU - Kiguchi, Takanori

AU - Cross, Jeffrey S.

AU - Sakurai, Osamu

AU - Shinozaki, Kazuo

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N2 - Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

AB - Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

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KW - Solid oxide fuel cell

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