Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films

Ryoichi Saotome; Naoki Wakiya; Takanori Kiguchi; Jeffrey S. Cross; Osamu Sakurai; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.485.133

Characterization of low temperature chemical vapor deposited Gd ₂O₃ doped CeO₂ films

Ryoichi Saotome, Naoki Wakiya, Takanori Kiguchi, Jeffrey S. Cross, Osamu Sakurai, Kazuo Shinozaki

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Highly oriented and polycrystalline Gd₂O₃ doped CeO₂ thin films were prepared on α-Al₂O ₃(0001) substrates by chemical vapor deposition, using Ce(C ₅H₄C₂H₅)₃ and Gd(C ₅H₄C₂H₅)₃ as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Original language	English
Title of host publication	Electroceramics in Japan XIV
Publisher	Trans Tech Publications Ltd
Pages	133-136
Number of pages	4
ISBN (Print)	9783037851821
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.485.133
Publication status	Published - 2011

Publication series

Name	Key Engineering Materials
Volume	485
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Keywords

Chemical vapor deposition
Gadolinia doped ceria
Solid oxide fuel cell

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Characterization of low temperature chemical vapor deposited Gd ₂O₃ doped CeO₂ films. / Saotome, Ryoichi; Wakiya, Naoki; Kiguchi, Takanori; Cross, Jeffrey S.; Sakurai, Osamu; Shinozaki, Kazuo.

Electroceramics in Japan XIV. Trans Tech Publications Ltd, 2011. p. 133-136 (Key Engineering Materials; Vol. 485).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{efbf1edf3872490aafd1c59c98ccbf72,

title = "Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films",

abstract = "Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.",

keywords = "Chemical vapor deposition, Gadolinia doped ceria, Solid oxide fuel cell",

author = "Ryoichi Saotome and Naoki Wakiya and Takanori Kiguchi and Cross, {Jeffrey S.} and Osamu Sakurai and Kazuo Shinozaki",

year = "2011",

doi = "10.4028/www.scientific.net/KEM.485.133",

language = "English",

isbn = "9783037851821",

series = "Key Engineering Materials",

publisher = "Trans Tech Publications Ltd",

pages = "133--136",

booktitle = "Electroceramics in Japan XIV",

}

TY - GEN

T1 - Characterization of low temperature chemical vapor deposited Gd 2O3 doped CeO2 films

AU - Saotome, Ryoichi

AU - Wakiya, Naoki

AU - Kiguchi, Takanori

AU - Cross, Jeffrey S.

AU - Sakurai, Osamu

AU - Shinozaki, Kazuo

PY - 2011

Y1 - 2011

N2 - Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

AB - Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O 3(0001) substrates by chemical vapor deposition, using Ce(C 5H4C2H5)3 and Gd(C 5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

KW - Chemical vapor deposition

KW - Gadolinia doped ceria

KW - Solid oxide fuel cell

UR - http://www.scopus.com/inward/record.url?scp=79960591685&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960591685&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.485.133

DO - 10.4028/www.scientific.net/KEM.485.133

M3 - Conference contribution

AN - SCOPUS:79960591685

SN - 9783037851821

T3 - Key Engineering Materials

SP - 133

EP - 136

BT - Electroceramics in Japan XIV

PB - Trans Tech Publications Ltd

ER -