Characterization of LiNb                         1-x                         Ta                         x                         O                         3                          composition-spread thin film by the scanning microwave microscope

Noriaki Okazaki; Sohei Okazaki; Hiroko Higuma; Shoji Miyashita; Yasuo Cho; Jun Nishimura; Tomoteru Fukumura; Masashi Kawasaki; Makoto Murakami; Yukio Yamamoto; Yuji Matsumoto; Hideomi Koinuma; Tetsuya Hasegawa

doi:10.1016/S0169-4332(03)00916-4

Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope

Noriaki Okazaki, Sohei Okazaki, Hiroko Higuma, Shoji Miyashita, Yasuo Cho, Jun Nishimura, Tomoteru Fukumura, Masashi Kawasaki, Makoto Murakami, Yukio Yamamoto, Yuji Matsumoto, Hideomi Koinuma, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Dielectric property of a composition-spread LiNb _1-x Ta _x O ₃ thin film, fabricated by the combinatorial pulsed-laser deposition (PLD) method, was systematically characterized by the scanning microwave microscope (SμM). Measured frequency shift showed a broad maximum around x = 0.2-0.5, and gradually decreased with x, resulting in a lower dielectric constant in the LiTaO ₃ side compared to the LiNbO ₃ side. The trend of frequency shift has been revealed to possess a strong correlation with the sharpness of XRD peak, suggesting that lowering of dielectric constant is principally brought about by the degradation of crystallinity.

Original language	English
Pages (from-to)	196-199
Number of pages	4
Journal	Applied Surface Science
Volume	223
Issue number	1-3
DOIs	https://doi.org/10.1016/S0169-4332(03)00916-4
Publication status	Published - 2004 Feb 15

Keywords

Composition-spread thin film
Concurrent X-ray diffraction
Dielectric constant
High-throughput characterization
Lithium niobate
Lithium tantalate
Pulsed-laser deposition (PLD)
Scanning microwave microscope (SμM)

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00916-4

Cite this

Okazaki, N., Okazaki, S., Higuma, H., Miyashita, S., Cho, Y., Nishimura, J., Fukumura, T., Kawasaki, M., Murakami, M., Yamamoto, Y., Matsumoto, Y., Koinuma, H., & Hasegawa, T. (2004). Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope Applied Surface Science, 223(1-3), 196-199. https://doi.org/10.1016/S0169-4332(03)00916-4

Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope . / Okazaki, Noriaki; Okazaki, Sohei; Higuma, Hiroko; Miyashita, Shoji; Cho, Yasuo; Nishimura, Jun; Fukumura, Tomoteru; Kawasaki, Masashi; Murakami, Makoto; Yamamoto, Yukio; Matsumoto, Yuji; Koinuma, Hideomi; Hasegawa, Tetsuya.

In: Applied Surface Science, Vol. 223, No. 1-3, 15.02.2004, p. 196-199.

Research output: Contribution to journal › Article › peer-review

Okazaki, N, Okazaki, S, Higuma, H, Miyashita, S, Cho, Y, Nishimura, J, Fukumura, T, Kawasaki, M, Murakami, M, Yamamoto, Y, Matsumoto, Y, Koinuma, H & Hasegawa, T 2004, ' Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope ', Applied Surface Science, vol. 223, no. 1-3, pp. 196-199. https://doi.org/10.1016/S0169-4332(03)00916-4

Okazaki N, Okazaki S, Higuma H, Miyashita S, Cho Y, Nishimura J et al. Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope Applied Surface Science. 2004 Feb 15;223(1-3):196-199. https://doi.org/10.1016/S0169-4332(03)00916-4

Okazaki, Noriaki ; Okazaki, Sohei ; Higuma, Hiroko ; Miyashita, Shoji ; Cho, Yasuo ; Nishimura, Jun ; Fukumura, Tomoteru ; Kawasaki, Masashi ; Murakami, Makoto ; Yamamoto, Yukio ; Matsumoto, Yuji ; Koinuma, Hideomi ; Hasegawa, Tetsuya. / Characterization of LiNb _1-x Ta _x O ₃ composition-spread thin film by the scanning microwave microscope In: Applied Surface Science. 2004 ; Vol. 223, No. 1-3. pp. 196-199.

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abstract = " Dielectric property of a composition-spread LiNb 1-x Ta x O 3 thin film, fabricated by the combinatorial pulsed-laser deposition (PLD) method, was systematically characterized by the scanning microwave microscope (SμM). Measured frequency shift showed a broad maximum around x = 0.2-0.5, and gradually decreased with x, resulting in a lower dielectric constant in the LiTaO 3 side compared to the LiNbO 3 side. The trend of frequency shift has been revealed to possess a strong correlation with the sharpness of XRD peak, suggesting that lowering of dielectric constant is principally brought about by the degradation of crystallinity.",

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AU - Cho, Yasuo

AU - Nishimura, Jun

AU - Fukumura, Tomoteru

AU - Kawasaki, Masashi

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AB - Dielectric property of a composition-spread LiNb 1-x Ta x O 3 thin film, fabricated by the combinatorial pulsed-laser deposition (PLD) method, was systematically characterized by the scanning microwave microscope (SμM). Measured frequency shift showed a broad maximum around x = 0.2-0.5, and gradually decreased with x, resulting in a lower dielectric constant in the LiTaO 3 side compared to the LiNbO 3 side. The trend of frequency shift has been revealed to possess a strong correlation with the sharpness of XRD peak, suggesting that lowering of dielectric constant is principally brought about by the degradation of crystallinity.

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