Abstract
Dielectric property of a composition-spread LiNb 1-x Ta x O 3 thin film, fabricated by the combinatorial pulsed-laser deposition (PLD) method, was systematically characterized by the scanning microwave microscope (SμM). Measured frequency shift showed a broad maximum around x = 0.2-0.5, and gradually decreased with x, resulting in a lower dielectric constant in the LiTaO 3 side compared to the LiNbO 3 side. The trend of frequency shift has been revealed to possess a strong correlation with the sharpness of XRD peak, suggesting that lowering of dielectric constant is principally brought about by the degradation of crystallinity.
Original language | English |
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Pages (from-to) | 196-199 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 223 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Feb 15 |
Keywords
- Composition-spread thin film
- Concurrent X-ray diffraction
- Dielectric constant
- High-throughput characterization
- Lithium niobate
- Lithium tantalate
- Pulsed-laser deposition (PLD)
- Scanning microwave microscope (SμM)
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films