TY - GEN
T1 - Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current
AU - Chen, J.
AU - Sekiguchi, T.
AU - Fukata, N.
AU - Takase, M.
AU - Chikyow, T.
AU - Yamabe, K.
AU - Hasumuma, R.
AU - Sato, M.
AU - Nara, Y.
AU - Yamada, K.
PY - 2008
Y1 - 2008
N2 - Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.
AB - Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.
KW - EBIC
KW - High-k dielectrics
KW - Leakage
UR - http://www.scopus.com/inward/record.url?scp=51549086983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51549086983&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2008.4558949
DO - 10.1109/RELPHY.2008.4558949
M3 - Conference contribution
AN - SCOPUS:51549086983
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 584
EP - 588
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -