Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasumuma, M. Sato, Y. Nara, K. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.

Original languageEnglish
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages584-588
Number of pages5
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: 2008 Apr 272008 May 1

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period08/4/2708/5/1

Keywords

  • EBIC
  • High-k dielectrics
  • Leakage

ASJC Scopus subject areas

  • Engineering(all)

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