Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013- 1×1015 cm-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm -2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm 2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)