Characterization of laser annealed InP with ellipsometry and Hall effect measurement

R. Fremunt, Y. Hirayama, F. Arai, T. Sugano

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5 Citations (Scopus)

Abstract

Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013- 1×1015 cm-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm -2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm 2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.

Original languageEnglish
Pages (from-to)530-532
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number5
DOIs
Publication statusPublished - 1984
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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