Characterization of ion implanted silicon and diamond by variable wavelength photoacoustic microscopy and scanning acoustic microscopy.

Yoshihiko Nagata, Kazushi Yamanaka, Hisato Ogiso, Shizuka Nakano, Toshio Koda

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

An ion implanter of a 3 megaelectron-volt energy modifies a subsurface layer of crystalline silicon and diamond-like film. The thickness of layer is up to a few microns. A scanning acoustic microscope and a variable wavelength photoacoustic microscope reveal a change of elastic and thermal property of the layer. The crystalline silicon implanted with silicon ions at a 3 x 1017cm-2dose shows a maximum 35% decrease of elasticity and a reduction of thermal conductivity by 3 orders of magnitude. The photoacoustic image of the diamond-like film implanted with nitrogen ions at a 7 x 1016cm-2dose shows a variation of film quality.

Original languageEnglish
Pages (from-to)1013-1023
Number of pages11
JournalNondestructive Testing and Evaluation
Volume8-9
Issue number1-6
DOIs
Publication statusPublished - 1992 Jun 1

Keywords

  • Elasticity
  • Ion implantation
  • Scanning acoustic microscopy
  • Silicon
  • Thermal conductivity
  • Variable wavelength photoacoustic microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)

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