Characterization of ion implanted layer using ion induced acoustic signal

Hisato Ogiso, Shizuka Nakano, Yoshihiko Nagata, Kazushi Yamanaka, Toshio Koda

Research output: Contribution to journalArticlepeer-review

Abstract

The acoustic signal induced by an intensity modulated MeV SiH ion beam was observed by both post-process and in process measurements to investigate the influence of the MeV Si ion implanted layer into Al plate on the ion acoustic signal A signal. A phase difference between IA signals at the implanted region and un implanted region was found. Therefore, the phase of IA signal can be applied to characterization of the ion implanted layer. Influence on the amplitude was not clear, however so this seems hard to use for the characterization.

Original languageEnglish
Pages (from-to)13-15
Number of pages3
JournalJapanese journal of applied physics
Volume29
DOIs
Publication statusPublished - 1990 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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