TY - JOUR
T1 - Characterization of ion implanted layer using ion induced acoustic signal
AU - Ogiso, Hisato
AU - Nakano, Shizuka
AU - Nagata, Yoshihiko
AU - Yamanaka, Kazushi
AU - Koda, Toshio
PY - 1990/1
Y1 - 1990/1
N2 - The acoustic signal induced by an intensity modulated MeV SiH ion beam was observed by both post-process and in process measurements to investigate the influence of the MeV Si ion implanted layer into Al plate on the ion acoustic signal A signal. A phase difference between IA signals at the implanted region and un implanted region was found. Therefore, the phase of IA signal can be applied to characterization of the ion implanted layer. Influence on the amplitude was not clear, however so this seems hard to use for the characterization.
AB - The acoustic signal induced by an intensity modulated MeV SiH ion beam was observed by both post-process and in process measurements to investigate the influence of the MeV Si ion implanted layer into Al plate on the ion acoustic signal A signal. A phase difference between IA signals at the implanted region and un implanted region was found. Therefore, the phase of IA signal can be applied to characterization of the ion implanted layer. Influence on the amplitude was not clear, however so this seems hard to use for the characterization.
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U2 - 10.7567/JJAPS.29S1.13
DO - 10.7567/JJAPS.29S1.13
M3 - Article
AN - SCOPUS:84956339229
SN - 0021-4922
VL - 29
SP - 13
EP - 15
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
ER -