CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.

Hideki Hasegawa, Eiji Ikeda, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMPVE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on experiments, a new generalized model for regrowth epitaxial interfaces is proposed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsSayan D. Mukherjee
PublisherSPIE
Pages250-261
Number of pages12
ISBN (Print)089252832X
Publication statusPublished - 1987
Externally publishedYes

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume797
ISSN (Print)0277-786X

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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