Characterization of indium tin oxide film and practical ITO film by electron microscopy

T. Nakao; T. Nakada; Y. Nakayama; K. Miyatani; Yuki Kimura; Y. Saito; C. Kaito

doi:10.1016/S0040-6090(00)00951-2

Characterization of indium tin oxide film and practical ITO film by electron microscopy

T. Nakao, T. Nakada, Y. Nakayama, K. Miyatani, Yuki Kimura, Y. Saito, C. Kaito

SCI - Earth Science

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

In order to clarify the structure of indium oxide film containing tin and tin oxides, various In₃O₃ based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In₂O₃ and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 × 10^-4 Ω cm.

Original language	English
Pages (from-to)	155-162
Number of pages	8
Journal	Thin Solid Films
Volume	370
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00951-2
Publication status	Published - 2000 Jul 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00951-2

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abstract = "In order to clarify the structure of indium oxide film containing tin and tin oxides, various In3O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 × 10-4 Ω cm.",

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AU - Nakao, T.

AU - Nakada, T.

AU - Nakayama, Y.

AU - Miyatani, K.

AU - Kimura, Yuki

AU - Saito, Y.

AU - Kaito, C.

PY - 2000/7/17

Y1 - 2000/7/17

N2 - In order to clarify the structure of indium oxide film containing tin and tin oxides, various In3O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 × 10-4 Ω cm.

AB - In order to clarify the structure of indium oxide film containing tin and tin oxides, various In3O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 × 10-4 Ω cm.

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Characterization of indium tin oxide film and practical ITO film by electron microscopy

Abstract

ASJC Scopus subject areas

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