Abstract
In order to clarify the structure of indium oxide film containing tin and tin oxides, various In3O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 × 10-4 Ω cm.
| Original language | English |
|---|---|
| Pages (from-to) | 155-162 |
| Number of pages | 8 |
| Journal | Thin Solid Films |
| Volume | 370 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jul 17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Nakao, T., Nakada, T., Nakayama, Y., Miyatani, K., Kimura, Y., Saito, Y., & Kaito, C. (2000). Characterization of indium tin oxide film and practical ITO film by electron microscopy. Thin Solid Films, 370(1), 155-162. https://doi.org/10.1016/S0040-6090(00)00951-2