Characterization of Hydrogen and Oxygen Atoms in SiN Films Produced by Plasma-Enhanced Reactive Sputtering

Iwao Sugimoto, Keiichi Yanagisawa, Hiroki Kuwano, Satoko Nakano, Akio Tago

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.

Original languageEnglish
Pages (from-to)2859-2866
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume12
Issue number5
DOIs
Publication statusPublished - 1994 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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