Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1994 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films