Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free free-standing substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189Å and 5.185Å, respectively. Peak positions of photoluminescence spectrum were D°X of 3.4715 eV and FXA of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007 Dec 1|
|Event||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
Duration: 2006 Oct 22 → 2006 Oct 27
ASJC Scopus subject areas
- Condensed Matter Physics