Characterization of free-standing GaN substrates prepared by self lift-off

S. W. Lee; H. Goto; T. Minegishi; W. H. Lee; J. S. Ha; H. J. Lee; Hyo Jong Lee; S. H. Lee; T. Goto; T. Hanada; M. W. Cho; T. Yao

doi:10.1002/pssc.200674783

Characterization of free-standing GaN substrates prepared by self lift-off

S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo Jong Lee, S. H. Lee, T. Goto, T. Hanada, M. W. Cho, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free free-standing substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189Å and 5.185Å, respectively. Peak positions of photoluminescence spectrum were D°X of 3.4715 eV and FX_A of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.

Original language	English
Pages (from-to)	2617-2620
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674783
Publication status	Published - 2007 Dec 1
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27

ASJC Scopus subject areas

Condensed Matter Physics

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@article{3a35e3275d0e4a7cb9ecd82d9ef0269b,

title = "Characterization of free-standing GaN substrates prepared by self lift-off",

abstract = "Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free free-standing substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189{\AA} and 5.185{\AA}, respectively. Peak positions of photoluminescence spectrum were D°X of 3.4715 eV and FXA of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.",

author = "Lee, {S. W.} and H. Goto and T. Minegishi and Lee, {W. H.} and Ha, {J. S.} and Lee, {H. J.} and Lee, {Hyo Jong} and Lee, {S. H.} and T. Goto and T. Hanada and Cho, {M. W.} and T. Yao",

year = "2007",

month = dec,

day = "1",

doi = "10.1002/pssc.200674783",

language = "English",

volume = "4",

pages = "2617--2620",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

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TY - JOUR

T1 - Characterization of free-standing GaN substrates prepared by self lift-off

AU - Lee, S. W.

AU - Goto, H.

AU - Minegishi, T.

AU - Lee, W. H.

AU - Ha, J. S.

AU - Lee, H. J.

AU - Lee, Hyo Jong

AU - Lee, S. H.

AU - Goto, T.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free free-standing substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189Å and 5.185Å, respectively. Peak positions of photoluminescence spectrum were D°X of 3.4715 eV and FXA of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.

AB - Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free free-standing substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189Å and 5.185Å, respectively. Peak positions of photoluminescence spectrum were D°X of 3.4715 eV and FXA of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.

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U2 - 10.1002/pssc.200674783

DO - 10.1002/pssc.200674783

M3 - Conference article

AN - SCOPUS:49749097904

VL - 4

SP - 2617

EP - 2620

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Characterization of free-standing GaN substrates prepared by self lift-off

Abstract

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