Characterization of extrinsic oxide breakdown on thin dielectric oxide

Katsuya Shiga, Junko Komoru, Masafumi Katsumata, Akinobu Teramoto, Yoji Mashiko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE82-C
Issue number4
Publication statusPublished - 1999

Keywords

  • Activation energy
  • Extrinsic oxide breakdown
  • Oxide reliability
  • TDDB
  • Thin oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Shiga, K., Komoru, J., Katsumata, M., Teramoto, A., & Mashiko, Y. (1999). Characterization of extrinsic oxide breakdown on thin dielectric oxide. IEICE Transactions on Electronics, E82-C(4), 589-592.