Characterization of dislocation structures in hexagonal SiC by transmission electron microscopy

Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai, Y. Ikuhara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We developed the transmission electron microscopy (TEM) sample preparation technique for the low dislocation density of 4H-SiC by combining the KOH+Na2O2 (KN) etching and the focused ion beam (FIB) micro sampling technique. The dislocation under sea-shell pit was then characterized by large-angle convergent-beam electron diffraction (LACBED). It is demonstrated that this method is powerful for evaluating Burgers vectors of dislocations. Burgers vector of the measured basal plane dislocation (BPD) is determined to be b=1/3[1210]. Two-beam bright-field (TBBF) imaging identified the rotating direction of the threading screw dislocation (TSD) is counter-clockwise.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages11-14
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 2011 Sep 252011 Sep 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period11/9/2511/9/29

Keywords

  • Dislocation structure
  • Hexagonal SiC
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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