Abstract
The dielectric constant of ultrathin (0.55-7.96 nm) SiO 2 films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO 2 films compared with thick SiO 2 films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO 2 and Si at the SiO 2 /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO 2 films.
Original language | English |
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Pages (from-to) | 351-355 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
Publication status | Published - 2003 Jun 30 |
Keywords
- AES
- AES parameter
- Dielectric constant
- Si
- SiO
- XPS
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films