Characterization of dielectric properties of ultrathin SiO                         2                          film formed on Si substrate

K. Hirose; H. Kitahara; T. Hattori

doi:10.1016/S0169-4332(03)00426-4

Characterization of dielectric properties of ultrathin SiO ₂ film formed on Si substrate

K. Hirose, H. Kitahara, T. Hattori

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The dielectric constant of ultrathin (0.55-7.96 nm) SiO ₂ films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO ₂ films compared with thick SiO ₂ films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO ₂ and Si at the SiO ₂ /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO ₂ films.

Original language	English
Pages (from-to)	351-355
Number of pages	5
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00426-4
Publication status	Published - 2003 Jun 30

Keywords

AES
AES parameter
Dielectric constant
Si
SiO
XPS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00426-4

Cite this

Characterization of dielectric properties of ultrathin SiO ₂ film formed on Si substrate . / Hirose, K.; Kitahara, H.; Hattori, T.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 351-355.

Research output: Contribution to journal › Article › peer-review

@article{4e728804ad43433fbfecd3b3d72335aa,

title = " Characterization of dielectric properties of ultrathin SiO 2 film formed on Si substrate ",

abstract = " The dielectric constant of ultrathin (0.55-7.96 nm) SiO 2 films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO 2 films compared with thick SiO 2 films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO 2 and Si at the SiO 2 /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO 2 films.",

keywords = "AES, AES parameter, Dielectric constant, Si, SiO, XPS",

author = "K. Hirose and H. Kitahara and T. Hattori",

year = "2003",

month = jun,

day = "30",

doi = "10.1016/S0169-4332(03)00426-4",

language = "English",

volume = "216",

pages = "351--355",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4 SPEC.",

}

TY - JOUR

T1 - Characterization of dielectric properties of ultrathin SiO 2 film formed on Si substrate

AU - Hirose, K.

AU - Kitahara, H.

AU - Hattori, T.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - The dielectric constant of ultrathin (0.55-7.96 nm) SiO 2 films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO 2 films compared with thick SiO 2 films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO 2 and Si at the SiO 2 /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO 2 films.

AB - The dielectric constant of ultrathin (0.55-7.96 nm) SiO 2 films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO 2 films compared with thick SiO 2 films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO 2 and Si at the SiO 2 /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO 2 films.

KW - AES

KW - AES parameter

KW - Dielectric constant

KW - Si

KW - SiO

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0038408880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038408880&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00426-4

DO - 10.1016/S0169-4332(03)00426-4

M3 - Article

AN - SCOPUS:0038408880

VL - 216

SP - 351

EP - 355

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC.

ER -