Characterization of dielectric properties of ultrathin SiO 2 film formed on Si substrate

K. Hirose, H. Kitahara, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    The dielectric constant of ultrathin (0.55-7.96 nm) SiO 2 films formed on Si(0 0 1) substrates was characterized in terms of the modified Auger parameter, α′. The α′ values for Si atoms were found to shift by about 0.7 eV for ultrathin SiO 2 films compared with thick SiO 2 films. This shift is apparently caused only by a change in the electrostatic screening energy originating from the dielectric discontinuity between the bulk dielectric constants of SiO 2 and Si at the SiO 2 /Si interface. This indicates that the bulk dielectric constant also holds for ultrathin SiO 2 films.

    Original languageEnglish
    Pages (from-to)351-355
    Number of pages5
    JournalApplied Surface Science
    Volume216
    Issue number1-4 SPEC.
    DOIs
    Publication statusPublished - 2003 Jun 30

    Keywords

    • AES
    • AES parameter
    • Dielectric constant
    • Si
    • SiO
    • XPS

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Fingerprint Dive into the research topics of 'Characterization of dielectric properties of ultrathin SiO <sub>2</sub> film formed on Si substrate'. Together they form a unique fingerprint.

    Cite this