Characterization of damaged layer using AC surface photovoltagein silicon wafers

Osamu Kohmoto; Satoru Araki; Chester Alexander

doi:10.1143/JJAP.32.3962

Characterization of damaged layer using AC surface photovoltagein silicon wafers

Osamu Kohmoto, Satoru Araki, Chester Alexander

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Ferromagnetic resonance in 1000-Ɨ-thick Co films evaporated on sapphire, glass or MgO substrates has been studied. An effective uniaxial anisotropy field (H_k) of -16.27 kOe and gyromagnetic ratio (े/2ॠ) of 3.10 GHz/kOe were obtained for Co film on sapphire. Assuming the saturation magnetization (4ॠM) of 17.58 kG, we derived a small intrinsic perpendicular anisotropy field (H_kC4ॠM) of 1.31 kOe.

Original language	English
Pages (from-to)	3962-3963
Number of pages	2
Journal	Japanese journal of applied physics
Volume	32
Issue number	9 R
DOIs	https://doi.org/10.1143/JJAP.32.3962
Publication status	Published - 1993 Sep
Externally published	Yes

Keywords

Anisotropy field
Cobalt
Evaporation
Fee
Ferromagnetic resonance
Film
Hcp
Linewidth
Resonance field

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.32.3962

Cite this

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title = "Characterization of damaged layer using AC surface photovoltagein silicon wafers",

abstract = "Ferromagnetic resonance in 1000-Ɨ-thick Co films evaporated on sapphire, glass or MgO substrates has been studied. An effective uniaxial anisotropy field (Hk) of -16.27 kOe and gyromagnetic ratio (े/2ॠ) of 3.10 GHz/kOe were obtained for Co film on sapphire. Assuming the saturation magnetization (4ॠM) of 17.58 kG, we derived a small intrinsic perpendicular anisotropy field (HkC4ॠM) of 1.31 kOe.",

keywords = "Anisotropy field, Cobalt, Evaporation, Fee, Ferromagnetic resonance, Film, Hcp, Linewidth, Resonance field",

author = "Osamu Kohmoto and Satoru Araki and Chester Alexander",

year = "1993",

month = sep,

doi = "10.1143/JJAP.32.3962",

language = "English",

volume = "32",

pages = "3962--3963",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 R",

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TY - JOUR

T1 - Characterization of damaged layer using AC surface photovoltagein silicon wafers

AU - Kohmoto, Osamu

AU - Araki, Satoru

AU - Alexander, Chester

PY - 1993/9

Y1 - 1993/9

N2 - Ferromagnetic resonance in 1000-Ɨ-thick Co films evaporated on sapphire, glass or MgO substrates has been studied. An effective uniaxial anisotropy field (Hk) of -16.27 kOe and gyromagnetic ratio (े/2ॠ) of 3.10 GHz/kOe were obtained for Co film on sapphire. Assuming the saturation magnetization (4ॠM) of 17.58 kG, we derived a small intrinsic perpendicular anisotropy field (HkC4ॠM) of 1.31 kOe.

AB - Ferromagnetic resonance in 1000-Ɨ-thick Co films evaporated on sapphire, glass or MgO substrates has been studied. An effective uniaxial anisotropy field (Hk) of -16.27 kOe and gyromagnetic ratio (े/2ॠ) of 3.10 GHz/kOe were obtained for Co film on sapphire. Assuming the saturation magnetization (4ॠM) of 17.58 kG, we derived a small intrinsic perpendicular anisotropy field (HkC4ॠM) of 1.31 kOe.

KW - Anisotropy field

KW - Cobalt

KW - Evaporation

KW - Fee

KW - Ferromagnetic resonance

KW - Film

KW - Hcp

KW - Linewidth

KW - Resonance field

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U2 - 10.1143/JJAP.32.3962

DO - 10.1143/JJAP.32.3962

M3 - Article

AN - SCOPUS:0027659780

VL - 32

SP - 3962

EP - 3963

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 R

ER -

Characterization of damaged layer using AC surface photovoltagein silicon wafers

Abstract

Keywords

ASJC Scopus subject areas

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