Characterization of Cu buffer layers for growth of L10 -FeNi thin films

M. Mizuguchi, S. Sekiya, K. Takanashi

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26 Citations (Scopus)

Abstract

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L 10 -FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu 3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L 10 -FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L 10 -FeNi thin films.

Original languageEnglish
Article number09A716
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 2010 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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