Characterization of Cu buffer layers for growth of L₁₀ -FeNi thin films

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L ₁₀ -FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu ₃). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L ₁₀ -FeNi ordered alloy was expected. The AuCu₃ buffer layer is thus a promising candidate material for the growth of L ₁₀ -FeNi thin films.