TY - JOUR
T1 - Characterization of chemically vapor deposited manganese barrier layers using X-ray absorption fine structure
AU - Ablett, James M.
AU - Wilson, Christopher J.
AU - Phuong, Nguyen Mai
AU - Koike, Junichi
AU - Tokei, Zsolt
AU - Sterbinsky, George E.
AU - Woicik, Joseph C.
PY - 2012/5/1
Y1 - 2012/5/1
N2 - Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO 2 and low-k dielectrics.
AB - Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO 2 and low-k dielectrics.
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U2 - 10.1143/JJAP.51.05EB01
DO - 10.1143/JJAP.51.05EB01
M3 - Article
AN - SCOPUS:84861501598
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 2
M1 - 05EB01
ER -