Characterization of chemically vapor deposited manganese barrier layers using X-ray absorption fine structure

James M. Ablett, Christopher J. Wilson, Nguyen Mai Phuong, Junichi Koike, Zsolt Tokei, George E. Sterbinsky, Joseph C. Woicik

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO 2 and low-k dielectrics.

Original languageEnglish
Article number05EB01
JournalJapanese journal of applied physics
Volume51
Issue number5 PART 2
DOIs
Publication statusPublished - 2012 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characterization of chemically vapor deposited manganese barrier layers using X-ray absorption fine structure'. Together they form a unique fingerprint.

Cite this