Abstract
Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO 2 and low-k dielectrics.
| Original language | English |
|---|---|
| Article number | 05EB01 |
| Journal | Japanese journal of applied physics |
| Volume | 51 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 2012 May 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Ablett, J. M., Wilson, C. J., Phuong, N. M., Koike, J., Tokei, Z., Sterbinsky, G. E., & Woicik, J. C. (2012). Characterization of chemically vapor deposited manganese barrier layers using X-ray absorption fine structure. Japanese journal of applied physics, 51(5 PART 2), [05EB01]. https://doi.org/10.1143/JJAP.51.05EB01