Characterization of chemical-vapor-deposited amorphous-silicon films

Toshiaki Shiraiwa, Osamu Sugiura, Hiroshi Kanoh, Norihito Asai, Koh Ichi Usami, Takeo Hattori, Masakiyo Matsumura

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have studied post-hydrogenation characteristics and photo-absorption characteristics of amorphous-silicon films thermally deposited from disilane at 500°C. There is a critical post-hydrogenation temperature of about 400°C, below which both the density of hydrogen (deuterium) atoms on the surface and the activation energy of their diffusion constants are constant. Post-hydrogenation drastically enhances the decrease of the photo-absorption coefficient for photon energies less than the optical bandgap. The optimum density of hydrogen atoms introduced by post-hydrogenation was between 3 at% and 3.5 at%. The Urbach tail slope Eq was 42 meV, i.e., about 8 meV lower than the typical value of the film deposited by plasma enhanced chemical vapor deposition (PECVD) method.

Original languageEnglish
Pages (from-to)L20-L23
JournalJapanese journal of applied physics
Volume32
Issue number1 A
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • Amorphous-silicon
  • Atomic hydrogen
  • Chemical vapor deposition
  • Localized states density
  • Photo-absorption coefficient
  • Post-hydrogenation
  • Urbach tail slope

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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