Characterization of chemical-vapor-deposited amorphous-silicon films

Toshiaki Shiraiwa, Osamu Sugiura, Hiroshi Kanoh, Norihito Asai, Koh Ichi Usami, Takeo Hattori, Masakiyo Matsumura

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    10 Citations (Scopus)

    Abstract

    We have studied post-hydrogenation characteristics and photo-absorption characteristics of amorphous-silicon films thermally deposited from disilane at 500°C. There is a critical post-hydrogenation temperature of about 400°C, below which both the density of hydrogen (deuterium) atoms on the surface and the activation energy of their diffusion constants are constant. Post-hydrogenation drastically enhances the decrease of the photo-absorption coefficient for photon energies less than the optical bandgap. The optimum density of hydrogen atoms introduced by post-hydrogenation was between 3 at% and 3.5 at%. The Urbach tail slope Eq was 42 meV, i.e., about 8 meV lower than the typical value of the film deposited by plasma enhanced chemical vapor deposition (PECVD) method.

    Original languageEnglish
    Pages (from-to)L20-L23
    JournalJapanese journal of applied physics
    Volume32
    Issue number1 A
    DOIs
    Publication statusPublished - 1993 Jan

    Keywords

    • Amorphous-silicon
    • Atomic hydrogen
    • Chemical vapor deposition
    • Localized states density
    • Photo-absorption coefficient
    • Post-hydrogenation
    • Urbach tail slope

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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