Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"

Keiichiro Hironaka; Toru Nagashima; Susumu Ikeda; Masanobu Azuma; Kazuya Takada; Hiroyuki Fukuyama

doi:10.1016/j.jcrysgro.2010.04.007

Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"

Keiichiro Hironaka, Toru Nagashima, Susumu Ikeda, Masanobu Azuma, Kazuya Takada, Hiroyuki Fukuyama

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Aluminum nitride single crystal fabricated by a novel growth technique "pyrolytic transportation method", which is advantageous for industrial process because of using α-Al₂O₃ as a source material instead of aluminum nitride, was characterized. This growth technique shows high growth rate up to 1.6 mm/h. High crystalline quality was indicated by X-ray topogragh and X-ray rocking curve. Full width at half maximum of (0 0 0 2) and (1 0 -1 0) were excellent values of 90 and 148 arcsec, respectively. Homoepitaxial overgrowth by hydride vapor phase epitaxy was successfully conducted. No dislocation was observed at the interface between the substrate and overgrowth layer by transmission electron microscopy.

Original language	English
Pages (from-to)	2527-2529
Number of pages	3
Journal	Journal of Crystal Growth
Volume	312
Issue number	18
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.04.007
Publication status	Published - 2010 Sep 1

Keywords

A1. Crystal morphology
A1. X-ray topography
A2. Growth from vapor
A2. Seed crystals
A3. Vapor phase epitaxy
B1. Nitrides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Characterization of AlN single crystal fabricated by a novel growth technique, {"}pyrolytic transportation method{"}",

abstract = "Aluminum nitride single crystal fabricated by a novel growth technique {"}pyrolytic transportation method{"}, which is advantageous for industrial process because of using α-Al2O3 as a source material instead of aluminum nitride, was characterized. This growth technique shows high growth rate up to 1.6 mm/h. High crystalline quality was indicated by X-ray topogragh and X-ray rocking curve. Full width at half maximum of (0 0 0 2) and (1 0 -1 0) were excellent values of 90 and 148 arcsec, respectively. Homoepitaxial overgrowth by hydride vapor phase epitaxy was successfully conducted. No dislocation was observed at the interface between the substrate and overgrowth layer by transmission electron microscopy.",

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author = "Keiichiro Hironaka and Toru Nagashima and Susumu Ikeda and Masanobu Azuma and Kazuya Takada and Hiroyuki Fukuyama",

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T1 - Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"

AU - Hironaka, Keiichiro

AU - Nagashima, Toru

AU - Ikeda, Susumu

AU - Azuma, Masanobu

AU - Takada, Kazuya

AU - Fukuyama, Hiroyuki

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Aluminum nitride single crystal fabricated by a novel growth technique "pyrolytic transportation method", which is advantageous for industrial process because of using α-Al2O3 as a source material instead of aluminum nitride, was characterized. This growth technique shows high growth rate up to 1.6 mm/h. High crystalline quality was indicated by X-ray topogragh and X-ray rocking curve. Full width at half maximum of (0 0 0 2) and (1 0 -1 0) were excellent values of 90 and 148 arcsec, respectively. Homoepitaxial overgrowth by hydride vapor phase epitaxy was successfully conducted. No dislocation was observed at the interface between the substrate and overgrowth layer by transmission electron microscopy.

AB - Aluminum nitride single crystal fabricated by a novel growth technique "pyrolytic transportation method", which is advantageous for industrial process because of using α-Al2O3 as a source material instead of aluminum nitride, was characterized. This growth technique shows high growth rate up to 1.6 mm/h. High crystalline quality was indicated by X-ray topogragh and X-ray rocking curve. Full width at half maximum of (0 0 0 2) and (1 0 -1 0) were excellent values of 90 and 148 arcsec, respectively. Homoepitaxial overgrowth by hydride vapor phase epitaxy was successfully conducted. No dislocation was observed at the interface between the substrate and overgrowth layer by transmission electron microscopy.

KW - A1. Crystal morphology

KW - A1. X-ray topography

KW - A2. Growth from vapor

KW - A2. Seed crystals

KW - A3. Vapor phase epitaxy

KW - B1. Nitrides

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