Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"

Keiichiro Hironaka, Toru Nagashima, Susumu Ikeda, Masanobu Azuma, Kazuya Takada, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Aluminum nitride single crystal fabricated by a novel growth technique "pyrolytic transportation method", which is advantageous for industrial process because of using α-Al2O3 as a source material instead of aluminum nitride, was characterized. This growth technique shows high growth rate up to 1.6 mm/h. High crystalline quality was indicated by X-ray topogragh and X-ray rocking curve. Full width at half maximum of (0 0 0 2) and (1 0 -1 0) were excellent values of 90 and 148 arcsec, respectively. Homoepitaxial overgrowth by hydride vapor phase epitaxy was successfully conducted. No dislocation was observed at the interface between the substrate and overgrowth layer by transmission electron microscopy.

Original languageEnglish
Pages (from-to)2527-2529
Number of pages3
JournalJournal of Crystal Growth
Issue number18
Publication statusPublished - 2010 Sep 1
Externally publishedYes


  • A1. Crystal morphology
  • A1. X-ray topography
  • A2. Growth from vapor
  • A2. Seed crystals
  • A3. Vapor phase epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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