Characterization of 3D stacked high resistivity Si interposers with polymer TSV liners for 3D RF module

Kwang Seong Choi, Haksun Lee, Hyun Cheol Bae, Yong Sung Eom, Kanuku Ri, Takafumi Fukushima, Mitsumasa Koyanagi, Jin Ho Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The material designs of the Si interposers are optimized for a 3D RF module. The high resistivity Si wafers are used for the Si interposer fabrication: 1,000 ω·cm ∼ 10,000 ω·cm. To reduce the capacitance and mechanical stress between Cufilled TSV and Si substrate, a polyimide insulation layer is applied as a TSV liner. We designs several types of the transmission line structures and measures their electrical properties. For the 3D interconnection between the Si interposers, fluxing underfill material is developed and used as a pre-applied underfill for the thermocompression bonding process. With these optimizations of materials design of the Si interposers, the microstrip line shows the electrical loss of 0.065 dB/mm at 10 GHz, and the insertion loss of the vertical transition is 0.4 dB at 10 GHz.

Original languageEnglish
Title of host publication2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages928-933
Number of pages6
ISBN (Electronic)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2015-July
ISSN (Print)0569-5503

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period15/5/2615/5/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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