Boron-doped and nondoped ultrafine β-silicon carbide (β-SiC) powders were synthesized via the carbothermal reduction of SiC precursors at temperatures of 1773-1973 K. Although the reaction rate of carbothermal reduction was generally higher when a boron-doped precursor was used, the reaction rate for the boron-doped precursor was reduced considerably at 1873 K. For boron-doped and non-doped precursors, the reaction rates were almost the same. Powder characterization via transmission electron microscopy indicated that the suppression of the reaction rate for boron-doped precursor at 1873 K was due to the formation of a special coexistent system with two types of particle agglomerates. As expected, boron doping inhibited the particle growth in the synthesis of SiC powder.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry