Characterization of β-silicon carbide powders synthesized by the carbothermal reduction of silicon carbide precursors

Daxiang Huang, Yuichi Ikuhara, Masaki Narisawa, Kiyohito Okamura

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Boron-doped and nondoped ultrafine β-silicon carbide (β-SiC) powders were synthesized via the carbothermal reduction of SiC precursors at temperatures of 1773-1973 K. Although the reaction rate of carbothermal reduction was generally higher when a boron-doped precursor was used, the reaction rate for the boron-doped precursor was reduced considerably at 1873 K. For boron-doped and non-doped precursors, the reaction rates were almost the same. Powder characterization via transmission electron microscopy indicated that the suppression of the reaction rate for boron-doped precursor at 1873 K was due to the formation of a special coexistent system with two types of particle agglomerates. As expected, boron doping inhibited the particle growth in the synthesis of SiC powder.

    Original languageEnglish
    Pages (from-to)3173-3176
    Number of pages4
    JournalJournal of the American Ceramic Society
    Volume81
    Issue number12
    DOIs
    Publication statusPublished - 1998 Jan 1

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Materials Chemistry

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