TY - JOUR
T1 - Characterization for high-performance CMOS using in-wafer advanced Kelvin-contact device structure
AU - Kuroda, Rihito
AU - Teramoto, Akinobu
AU - Komuro, Takanori
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
N1 - Funding Information:
Manuscript received July 01, 2008; revised October 22, 2008. Current version published February 04, 2009. This work was supported in part by Grant-in-Aid for Specially Promoted Research (Project no. 18002004), in part by Grant-in-Aid for Research Fellowship (Project no. 19 1356) both from the Japan Society for the Promotion of Science, also in part by the New Intelligence for IC Differentiation (DIIN) Project.
PY - 2009/2
Y1 - 2009/2
N2 - In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.
AB - In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.
KW - Charge carrier mobility
KW - Contact resistance
KW - Electric variables measurement
KW - MOSFETs
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U2 - 10.1109/TSM.2008.2010743
DO - 10.1109/TSM.2008.2010743
M3 - Article
AN - SCOPUS:59949097275
VL - 22
SP - 126
EP - 133
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
SN - 0894-6507
IS - 1
M1 - 4773500
ER -