Characterization for high-performance CMOS using in-wafer advanced Kelvin-contact device structure

Rihito Kuroda; Akinobu Teramoto; Takanori Komuro; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/TSM.2008.2010743

Characterization for high-performance CMOS using in-wafer advanced Kelvin-contact device structure

Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.

Original language	English
Article number	4773500
Pages (from-to)	126-133
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/TSM.2008.2010743
Publication status	Published - 2009 Feb 1

Keywords

Charge carrier mobility
Contact resistance
Electric variables measurement
MOSFETs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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abstract = "In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.",

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AU - Ohmi, Tadahiro

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