Abstract
In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.
Original language | English |
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Article number | 4773500 |
Pages (from-to) | 126-133 |
Number of pages | 8 |
Journal | IEEE Transactions on Semiconductor Manufacturing |
Volume | 22 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2009 Feb 1 |
Keywords
- Charge carrier mobility
- Contact resistance
- Electric variables measurement
- MOSFETs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering