Characterization and modeling of tunnel barrier reliability

K. Nakajima; M. Amano; M. Sagoi; Yoshiaki Saito

doi:10.1109/INTMAG.2002.1000782

Characterization and modeling of tunnel barrier reliability

K. Nakajima, M. Amano, M. Sagoi, Yoshiaki Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The reliability of ultra-thin dielectric film composing the ferromagnetic tunnel junctions (MTJs) is of great importance for MRAM development. Considerable work has been done in the area of gate oxide, however there are relatively few works in ultra-thin aluminum oxide serving as a tunnel barrier. In this work, the dielectric breakdown of MTJs is investigated, by means of current sweep experiments and time-to-breakdown measurements on a series of patterned MTJs with both different junction area and stress conditions. We will present the analytical results and discussions of the breakdown mechanism of MTJs. The MTJs used in this work were dual spin valve-type double tunnel junctions prepared by the ultra-high vacuum sputtering technique, having the structure SiO₂/Ta/NiFe/IrMn/Co₅₀Fe₅₀(2 nm)/AlO_x/CoFeNi(3 nm)/AlO_x/Co₅₀Fe₅₀(2 nm)/IrMn. The tunnel barriers were fabricated by deposition of 0.8 nm Al following in-situ plasma oxidization. The samples were patterned using photolithography and ion milling.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1000782
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	02/4/28 → 02/5/2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

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10.1109/INTMAG.2002.1000782

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Nakajima, K, Amano, M, Sagoi, M & Saito, Y 2002, Characterization and modeling of tunnel barrier reliability. in INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1000782, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 02/4/28. https://doi.org/10.1109/INTMAG.2002.1000782

@inproceedings{4060a63b1051400995eaa74ab3b5b1e1,

title = "Characterization and modeling of tunnel barrier reliability",

abstract = "The reliability of ultra-thin dielectric film composing the ferromagnetic tunnel junctions (MTJs) is of great importance for MRAM development. Considerable work has been done in the area of gate oxide, however there are relatively few works in ultra-thin aluminum oxide serving as a tunnel barrier. In this work, the dielectric breakdown of MTJs is investigated, by means of current sweep experiments and time-to-breakdown measurements on a series of patterned MTJs with both different junction area and stress conditions. We will present the analytical results and discussions of the breakdown mechanism of MTJs. The MTJs used in this work were dual spin valve-type double tunnel junctions prepared by the ultra-high vacuum sputtering technique, having the structure SiO2/Ta/NiFe/IrMn/Co50Fe50(2 nm)/AlOx/CoFeNi(3 nm)/AlOx/Co50Fe50(2 nm)/IrMn. The tunnel barriers were fabricated by deposition of 0.8 nm Al following in-situ plasma oxidization. The samples were patterned using photolithography and ion milling.",

author = "K. Nakajima and M. Amano and M. Sagoi and Yoshiaki Saito",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/INTMAG.2002.1000782",

language = "English",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - GEN

T1 - Characterization and modeling of tunnel barrier reliability

AU - Nakajima, K.

AU - Amano, M.

AU - Sagoi, M.

AU - Saito, Yoshiaki

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The reliability of ultra-thin dielectric film composing the ferromagnetic tunnel junctions (MTJs) is of great importance for MRAM development. Considerable work has been done in the area of gate oxide, however there are relatively few works in ultra-thin aluminum oxide serving as a tunnel barrier. In this work, the dielectric breakdown of MTJs is investigated, by means of current sweep experiments and time-to-breakdown measurements on a series of patterned MTJs with both different junction area and stress conditions. We will present the analytical results and discussions of the breakdown mechanism of MTJs. The MTJs used in this work were dual spin valve-type double tunnel junctions prepared by the ultra-high vacuum sputtering technique, having the structure SiO2/Ta/NiFe/IrMn/Co50Fe50(2 nm)/AlOx/CoFeNi(3 nm)/AlOx/Co50Fe50(2 nm)/IrMn. The tunnel barriers were fabricated by deposition of 0.8 nm Al following in-situ plasma oxidization. The samples were patterned using photolithography and ion milling.

AB - The reliability of ultra-thin dielectric film composing the ferromagnetic tunnel junctions (MTJs) is of great importance for MRAM development. Considerable work has been done in the area of gate oxide, however there are relatively few works in ultra-thin aluminum oxide serving as a tunnel barrier. In this work, the dielectric breakdown of MTJs is investigated, by means of current sweep experiments and time-to-breakdown measurements on a series of patterned MTJs with both different junction area and stress conditions. We will present the analytical results and discussions of the breakdown mechanism of MTJs. The MTJs used in this work were dual spin valve-type double tunnel junctions prepared by the ultra-high vacuum sputtering technique, having the structure SiO2/Ta/NiFe/IrMn/Co50Fe50(2 nm)/AlOx/CoFeNi(3 nm)/AlOx/Co50Fe50(2 nm)/IrMn. The tunnel barriers were fabricated by deposition of 0.8 nm Al following in-situ plasma oxidization. The samples were patterned using photolithography and ion milling.

UR - http://www.scopus.com/inward/record.url?scp=85017279297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017279297&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2002.1000782

DO - 10.1109/INTMAG.2002.1000782

M3 - Conference contribution

AN - SCOPUS:85017279297

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -

Characterization and modeling of tunnel barrier reliability

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