Characterization and luminescence properties of Sr2 Si 5 N8: Eu2+ phosphor for white light-emitting-diode illumination

Xianqing Piao; Takashi Horikawa; Hiromasa Hanzawa; Ken Ichi MacHida

doi:10.1063/1.2196064

Characterization and luminescence properties of Sr₂ Si ₅ N₈: Eu²⁺ phosphor for white light-emitting-diode illumination

Xianqing Piao, Takashi Horikawa, Hiromasa Hanzawa, Ken Ichi MacHida

Research output: Contribution to journal › Article › peer-review

424 Citations (Scopus)

Abstract

Eu2+ -doped ternary nitride phosphor, Sr2 Si5 N8: Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-x Eux) 2 Si5 N8: Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.

Original language	English
Article number	161908
Journal	Applied Physics Letters
Volume	88
Issue number	16
DOIs	https://doi.org/10.1063/1.2196064
Publication status	Published - 2006 Apr 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Characterization and luminescence properties of Sr2 Si 5 N8: Eu2+ phosphor for white light-emitting-diode illumination",

abstract = "Eu2+ -doped ternary nitride phosphor, Sr2 Si5 N8: Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-x Eux) 2 Si5 N8: Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.",

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T2 - Eu2+ phosphor for white light-emitting-diode illumination

AU - Piao, Xianqing

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AU - MacHida, Ken Ichi

PY - 2006/4/17

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N2 - Eu2+ -doped ternary nitride phosphor, Sr2 Si5 N8: Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-x Eux) 2 Si5 N8: Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.

AB - Eu2+ -doped ternary nitride phosphor, Sr2 Si5 N8: Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-x Eux) 2 Si5 N8: Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.

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Characterization and luminescence properties of Sr₂ Si ₅ N₈: Eu²⁺ phosphor for white light-emitting-diode illumination

Abstract

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