Characteristics of vertically stacked graphene-layer infrared photodetectors

M. Ryzhii, T. Otsuji, V. E. Karasik, V. Leiman, M. S. Shur, V. Ryzhii, V. Mitin

Research output: Contribution to journalArticlepeer-review

Abstract

We evaluate the characteristics of the vertically stacked graphene-layer infrared photodetector (VS-GLIP). Each period of the stack (which constitutes the GLIP) consists of a GL (serving as a photosensitive element with a floating potential) sandwiched between barrier layers made of the van der Waals materials, and highly conducting emitter and collector contact n-GLs. The operation of VS-GLIPs is associated with the interband photoexcitation of electrons from the GLs (direct or followed by the tunneling), injection of the electrons from the emitter layer and the collection of both the photoexcited and injected electrons by the collector layer. At a small probability of the electron capture into the floating GLs, each GLIP section exhibits an elevated photoconductive gain. Due to the vertical multi-GLIP structure the absorption efficiency can be close to unity. Due to this and because the photocurrents produced by each GLIP in the stack are summarized, the VS-GLIP can exhibit elevated detector responsivity and detectivity, in particular, exceeding those of the GLIPs.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalSolid-State Electronics
Volume155
DOIs
Publication statusPublished - 2019 May

Keywords

  • Graphene
  • Graphene-layer infrared photodetector
  • van der Waals heterostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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