Characteristics of ultrathin lanthanum oxide films on germanium substrate: Comparison with those on silicon substrate

Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Ultrathin La2O3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N2 ambient. There was little interfacial layer growth at the interface of La2O3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of 6 × 10-7 A/cm 2 at 1 V was achieved using a Pt/La2O3/Ge structure by post-deposition annealing at 600°C. This result suggests that ultrathin La2O3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal-oxide-semiconductor field-effect transistor.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume46
    Issue number12-16
    DOIs
    Publication statusPublished - 2007 Apr 13

    Keywords

    • Germanium
    • High-k
    • LaO
    • MOS
    • PDA
    • Post-deposition annealing

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Characteristics of ultrathin lanthanum oxide films on germanium substrate: Comparison with those on silicon substrate'. Together they form a unique fingerprint.

  • Cite this