Characteristics of SrTiO3 field-effect transistors with DyScO3 gate insulators

Kazunori Nishio, Takuya Abe, Ryota Takahashi, Mikk Lippmaa

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    We have developed a top-gate type of field-effect transistor with a single-crystal SrTiO3 channel and a DyScO3 gate insulator stack consisting of an epitaxial interface layer and an amorphous breakdown barrier layer. We show that the zero-bias conductivity of the transistor channel is strongly affected by the presence of charged traps in the amorphous gate insulator. Low off-state current could only be achieved in devices that were fabricated at an oxygen ambient pressure of 10 mTorr. At lower pressures, metallic channel interfaces were obtained, even after postannealing in air. When both epitaxial and amorphous DyScO3 films were grown at 10 mTorr of oxygen, the on/off ratio of the field-effect transistors (FETs) reached 10 6. We argue that when designing oxide FETs, it is necessary to consider not only breakdown characteristics, but also the charged trap density in wide-gap oxide insulators.

    Original languageEnglish
    Article number125701
    JournalJapanese journal of applied physics
    Volume49
    Issue number12
    DOIs
    Publication statusPublished - 2010 Dec 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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