Characteristics of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

Hideki Nakazawa, Soushi Miura, Ryosuke Kamata, Saori Okuno, Yoshiharu Enta, Maki Suemitsu, Toshimi Abe

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have deposited silicon/nitrogen-incorporated diamond-like carbon (Si-N-DLC) films by radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using methane (CH 4), argon (Ar), and hexamethyldisilazane {[(CH 3) 3Si] 2NH} as the Si and N source, and investigated the structure and the mechanical and tribological properties of the films. We compared the properties of the Si-N-DLC films with those of the Siincorporated DLC (Si-DLC) films prepared by PECVD using monomethylsilane (CH 3SiH 3) as the Si source. It was found that the N incorporation together with Si into DLC was effective in further decreasing the internal stress and increasing the adhesion strength. The friction coefficients of the Si-N-DLC films containing 4.0% N or less were as low as those of the Si-DLC films. We also found that the Si-N-DLC film containing 10.0% Si and 4.0% N had a higher wear resistance than the Si-DLC film containing 10.8% Si. The wear rate was comparable to that of the undoped DLC film.

Original languageEnglish
Article number015603
JournalJapanese journal of applied physics
Volume51
Issue number1
DOIs
Publication statusPublished - 2012 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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