Characteristics of silicon-on-low k insulator metal oxide semiconductor field effect transistor with metal back gate

Yuske Yamada, Hyuckjae Oh, Takeshi Sakaguchi, Takafumi Fukushima, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

Abstract

We proposed a silicon-on-low k insulator (SOLK) metal oxide semiconductor field effect transistor (MOSFET) with a metal back gate for high-speed and ultralow power devices. In this work, Benzocyclobutene (BCB) and tetramethyl ammonium hydroxide (TMAH) were employed to fabricate SOLK Devices without damaging the transistor channels. We successfully fabricated the proposed submicron fully depleted (FD) SOLK MOSFETs with a metal back gate. The process technologies and electrical properties of SOLK MOSFETs were introduced in detail. Furthermore, threshold voltage shift was obtained at 55 mV/V using a NMOSFET and at 35 mV/V using a PMOSFET and drain current characteristics are enhanced by the back gate bias.

Original languageEnglish
Pages (from-to)3040-3044
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Keywords

  • BCB
  • FD SOLK MOSFET
  • Metal back gate
  • TMAH

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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