Characteristics of oxide TFT using carbon-doped In2O3 thin film fabricated by low-temperature ALD using ethylcyclopentadienyl indium (in-EtCp) and H2O & O3

R. Kobayashi, T. Nabatame, K. Kurishima, T. Onaya, A. Ohi, N. Ikeda, T. Nagata, K. Tsukagoshi, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated characteristic of the In2O3 films deposited by various atomic layer deposition (ALD) conditions such as growth temperature and doses of ethylcyclopentadienyl indium (InEtCp) precursor and H2O/O3 oxidant gases. A self-limited ALD window was observed in the In2O3 film deposition when an InEtCp and H2O/O3 doses were supplied over 27.6 μmol and 0.09/2,94 mmol, respectively, regardless of the growth temperature. The ratio of In:0:C of the In2O3 films at 150, 170 and 200 °C were 1:1.16:0.04 (InO1.16C0.04), 1:1.16:0.03 (InO1.16C0.03) and 1:1.2:0 (InO1.2), respectively. We found that the carbon-doped (InO1.16C0.04, InO1.16C0.0303) and carbon-free In2O3 (InO1.2) films could be easily deposited by changing the growth temperature. All films had an amorphous structure. The electrical properties of InO1.16C0.04 TFT changed dramatically from metal-like conductor to semiconductor after post-metallization annealing at 150 °C in O3 while no InOi.2 TFT changed. This is thought to be due to the suppression of excess oxygen vacancies in InO1.16C0.04 channel by effect of doped carbon. The InO1.16C0.04-containing TFT exhibited superior characteristics of S.S (0.37 V/dec), Ion/Ioff (1.0x108), Vth. (3.5 V) and saturation field effect mobility (20.4 cm2/Vs). Therefore, carbon-doped In2O3 is a promising material as a channel of a flexible TFT where low temperature formation is essential.

Original languageEnglish
Title of host publicationAtomic Layer Deposition Applications 15
EditorsFred Roozeboom, Stefan De Gendt, Jolien Dendooven, Jeffrey W. Elam, Oscar van der Straten, Chanyuan Liu, Ganesh Sundaram, Andrea Illiberi
PublisherElectrochemical Society Inc.
Pages3-13
Number of pages11
Edition3
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2019 Jan 1
Externally publishedYes
EventInternational Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting - Atlanta, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameECS Transactions
Number3
Volume92
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceInternational Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting
CountryUnited States
CityAtlanta
Period19/10/1319/10/17

ASJC Scopus subject areas

  • Engineering(all)

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