Characteristics of nanocrystalline AlN:Er films co-deposited by using AlN, Er, and SiO2 targets

J. W. Lim, W. Takayama, Y. F. Zhu, J. W. Bae, J. F. Wang, S. Y. Ji, K. Mimura, J. H. Yoo, M. Isshiki

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10 Citations (Scopus)


We report the characteristics of AlN:Er films that were co-deposited by using AlN, Er, and SiO2 targets. The PL emission spectra show strong green emissions of Er3+ ions in AlN:Er films annealed at an optimal temperature of 750 °C, which is attributed to the intra-4f Er3+ transitions of 2H11/2 4I15/2 and 4F7/2 4I15/2. This optimal temperature can activate Er species as an efficient visible luminescence center. High-resolution transmission electron microscopy (HREM) observations showed that the AlN:Er film annealed at 750 °C exhibits the microstructure of AlN nanocrystallites embedded in the amorphous matrix. The occurrence of strong Er3+ emissions in the amorphous-nanocrystalline AlN:Er films by thermal annealing might contribute to an increased number of excitation Er3+ centers and the presence of oxygen related to Er3+ excitation and recombination processes. A distinct visible bluish green emission is also confirmed from the EL device with an amorphous-nanocrystalline AlN:Er active layer.

Original languageEnglish
Pages (from-to)3740-3745
Number of pages6
JournalMaterials Letters
Issue number17
Publication statusPublished - 2007 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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