Characteristics of nano-grating N-channel MOSFETs for improved current drivability

Xiaoli Zhu, Shin Ichiro Kuroki, Koji Kotani, Hideharu Shido, Masatoshi Fukuda, Yasuyoshi Mishima, Takashi Yto

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35 nm showed 21 % improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.

Original languageEnglish
Pages (from-to)1830-1836
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE90C
Issue number9
DOIs
Publication statusPublished - 2007 Sep 1

Keywords

  • Current-drivability
  • Effective mobility
  • Nano-grating
  • Transconductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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