Characteristics of electron beam-evaporated high κ-TiOx thin films on n-GaAs

Yutaka Oyama, Takeo Ohno, Taiji Sato, Jun Ichi Nishizawa

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Electrical and structural evaluations have been performed on high-k TiOx dielectrics which had been deposited on {001} oriented n-GaAs at 100 °C by electron beam evaporation of TiO2 in a mixed atmosphere of O2/Ar. A permittivity, εs, as high as 100 has been achieved, and a breakdown field strength of 0.5 MV/cm has been obtained. Room temperature transistor action was realized utilising a p +n+ tunnel transistor with TiOx gate dielectric, both in enhancement and depletion mode operation.

Original languageEnglish
Pages (from-to)1723-1726
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5
Publication statusPublished - 2007 Dec 1
Event33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
Duration: 2006 Aug 132006 Aug 17

ASJC Scopus subject areas

  • Condensed Matter Physics


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