Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn/O flux ratios

Agus Setiawan, Zahra Vashaei, Meoung Whan Cho, Takafumi Yao, Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, I. Yonenaga, Hang Ju Ko

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72 Citations (Scopus)

Abstract

The characteristics of the dislocations in the ZnO layers grown on c sapphire by the plasma-assisted molecular beam epitaxy (P-MBE) under different Zn/O flux ratios were discussed. It was observed that the ZnO layers were characterize using transmission electron microscopy (TEM) and the high-resolution x-ray diffraction (HRXRD). It was also observed that by considering the slip system in the wurtzite-structure ZnO, the glide planes of the dislocations were closed to (10-10) for the O-rich grown ZnO and (10-11) for the stoichometric and Zn-rich grown ZnO. The results show that the thickness of the interface dislocations in the O-rich grown ZnO was much thinner than in the stoichometric and Zn-rich grown ZnO.

Original languageEnglish
Pages (from-to)3763-3768
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number7
DOIs
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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