The characteristics of the dislocations in the ZnO layers grown on c sapphire by the plasma-assisted molecular beam epitaxy (P-MBE) under different Zn/O flux ratios were discussed. It was observed that the ZnO layers were characterize using transmission electron microscopy (TEM) and the high-resolution x-ray diffraction (HRXRD). It was also observed that by considering the slip system in the wurtzite-structure ZnO, the glide planes of the dislocations were closed to (10-10) for the O-rich grown ZnO and (10-11) for the stoichometric and Zn-rich grown ZnO. The results show that the thickness of the interface dislocations in the O-rich grown ZnO was much thinner than in the stoichometric and Zn-rich grown ZnO.
ASJC Scopus subject areas
- Physics and Astronomy(all)