Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

D. C. Oh, J. S. Song, J. H. Chang, T. Takai, T. Hanada, M. W. Cho, T. Yao

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25eV, and its intensity increases with Al concentration. This deep-level is located at 0.55eV above valence band maximum, implying a point defect such as a self-activated center, AlZnVZn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80eV below conduction band minimum, with the electron capture cross-sections of 810-12 and 1×10-7cm2, respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.

Original languageEnglish
Pages (from-to)567-571
Number of pages5
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct 1


  • Al-doped ZnSe
  • Carrier compensation
  • Deep level

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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