Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

D. C. Oh; J. S. Song; J. H. Chang; T. Takai; T. Hanada; M. W. Cho; T. Yao

doi:10.1016/j.mssp.2003.07.017

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

D. C. Oh, J. S. Song, J. H. Chang, T. Takai, T. Hanada, M. W. Cho, T. Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25eV, and its intensity increases with Al concentration. This deep-level is located at 0.55eV above valence band maximum, implying a point defect such as a self-activated center, Al_ZnV_Zn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80eV below conduction band minimum, with the electron capture cross-sections of 810^-12 and 1×10^-7cm², respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.

Original language	English
Pages (from-to)	567-571
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.017
Publication status	Published - 2003 Oct 1

Keywords

Al-doped ZnSe
Carrier compensation
Deep level

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2003.07.017

Cite this

@article{899b00e00baf44f2a5c45eab1410a757,

title = "Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy",

abstract = "We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25eV, and its intensity increases with Al concentration. This deep-level is located at 0.55eV above valence band maximum, implying a point defect such as a self-activated center, AlZnVZn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80eV below conduction band minimum, with the electron capture cross-sections of 810-12 and 1×10-7cm2, respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.",

keywords = "Al-doped ZnSe, Carrier compensation, Deep level",

author = "Oh, {D. C.} and Song, {J. S.} and Chang, {J. H.} and T. Takai and T. Hanada and Cho, {M. W.} and T. Yao",

year = "2003",

month = oct,

day = "1",

doi = "10.1016/j.mssp.2003.07.017",

language = "English",

volume = "6",

pages = "567--571",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

AU - Oh, D. C.

AU - Song, J. S.

AU - Chang, J. H.

AU - Takai, T.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25eV, and its intensity increases with Al concentration. This deep-level is located at 0.55eV above valence band maximum, implying a point defect such as a self-activated center, AlZnVZn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80eV below conduction band minimum, with the electron capture cross-sections of 810-12 and 1×10-7cm2, respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.

AB - We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25eV, and its intensity increases with Al concentration. This deep-level is located at 0.55eV above valence band maximum, implying a point defect such as a self-activated center, AlZnVZn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80eV below conduction band minimum, with the electron capture cross-sections of 810-12 and 1×10-7cm2, respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.

KW - Al-doped ZnSe

KW - Carrier compensation

KW - Deep level

UR - http://www.scopus.com/inward/record.url?scp=1642634074&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642634074&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.07.017

DO - 10.1016/j.mssp.2003.07.017

M3 - Article

AN - SCOPUS:1642634074

SN - 1369-8001

VL - 6

SP - 567

EP - 571

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this