In this paper we studied characteristics of the Pt/ Al2O3/(Ta/Nb)Ox/Al2O3 /SiO2/p-Si capacitors, fabricated by using atomic layer deposition at 200 °C. Note that a large flatband voltage shift ( Vfb) value of more than 8 V appears after programming at 1 mC/cm2 because large amount of charge is trapped in the Al2O3/(Ta/Nb)Ox/Al2O3 structure. The δVfb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.
|Number of pages||8|
|Publication status||Published - 2014 Jan 1|
|Event||6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States|
Duration: 2014 May 11 → 2014 May 15
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