Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer

T. Nabatame, A. Ohi, K. Ito, M. Takahashi, T. Chikyo

Research output: Contribution to journalConference articlepeer-review


In this paper we studied characteristics of the Pt/ Al2O3/(Ta/Nb)Ox/Al2O3 /SiO2/p-Si capacitors, fabricated by using atomic layer deposition at 200 °C. Note that a large flatband voltage shift ( Vfb) value of more than 8 V appears after programming at 1 mC/cm2 because large amount of charge is trapped in the Al2O3/(Ta/Nb)Ox/Al2O3 structure. The δVfb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.

Original languageEnglish
Pages (from-to)293-300
Number of pages8
JournalECS Transactions
Issue number2
Publication statusPublished - 2014
Externally publishedYes
Event6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer'. Together they form a unique fingerprint.

Cite this