Characteristics of AIN films grown on thermally-nitrided sapphire substrates

Kohei Ueno; Jitsuo Ohta; Hiroshi Fujioka; Hiroyuki Fukuyama

doi:10.1143/APEX.4.015501

Characteristics of AIN films grown on thermally-nitrided sapphire substrates

Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka, Hiroyuki Fukuyama

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have grown AIN films by pulsed laser deposition (PLD) on sapphire (0001) substrates nitrided in a carbon-saturated N₂-CO gas mixture and investigated their structural properties. It is found that AIN epilayers prepared on as-grown N₂-CO nitrided sapphire consist of two domains whose (1010)_AIN directions are rotated by approximately ±0.5° from the (1120)_sapphire directions. On the other hand, a nitrogen radical treatment of the as-grown nitrided substrate makes it possible to eliminate one of the domains without any degradation in crystalline quality. The full width at half maximum values of X-ray rocking curves for the 0002 and 1012 diffractions of the AlN film are as low as 27 and 590arcsec, respectively.

Original language	English
Article number	015501
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.015501
Publication status	Published - 2011 Jan 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We have grown AIN films by pulsed laser deposition (PLD) on sapphire (0001) substrates nitrided in a carbon-saturated N2-CO gas mixture and investigated their structural properties. It is found that AIN epilayers prepared on as-grown N2-CO nitrided sapphire consist of two domains whose (1010)AIN directions are rotated by approximately ±0.5° from the (1120)sapphire directions. On the other hand, a nitrogen radical treatment of the as-grown nitrided substrate makes it possible to eliminate one of the domains without any degradation in crystalline quality. The full width at half maximum values of X-ray rocking curves for the 0002 and 1012 diffractions of the AlN film are as low as 27 and 590arcsec, respectively.",

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AU - Ohta, Jitsuo

AU - Fujioka, Hiroshi

AU - Fukuyama, Hiroyuki

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Characteristics of AIN films grown on thermally-nitrided sapphire substrates

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