Characteristics of AIN films grown on thermally-nitrided sapphire substrates

Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka, Hiroyuki Fukuyama

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have grown AIN films by pulsed laser deposition (PLD) on sapphire (0001) substrates nitrided in a carbon-saturated N2-CO gas mixture and investigated their structural properties. It is found that AIN epilayers prepared on as-grown N2-CO nitrided sapphire consist of two domains whose (1010)AIN directions are rotated by approximately ±0.5° from the (1120)sapphire directions. On the other hand, a nitrogen radical treatment of the as-grown nitrided substrate makes it possible to eliminate one of the domains without any degradation in crystalline quality. The full width at half maximum values of X-ray rocking curves for the 0002 and 1012 diffractions of the AlN film are as low as 27 and 590arcsec, respectively.

Original languageEnglish
Article number015501
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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