Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, M. S. Shur

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)

Abstract

The operation of a high-electron mobility transistor (HEMT) photomier with vertical optical input through the ungated source-gate and gate-drain regions was considered. As such, an analytical device model for HEMT photomiers was developed. Using this model, the frequency-dependent responsivity of this device was calculated as a function of the structural parameters and gate voltage.

Original languageEnglish
Pages (from-to)2084-2089
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number4
DOIs
Publication statusPublished - 2004 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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