The operation of a high-electron mobility transistor (HEMT) photomier with vertical optical input through the ungated source-gate and gate-drain regions was considered. As such, an analytical device model for HEMT photomiers was developed. Using this model, the frequency-dependent responsivity of this device was calculated as a function of the structural parameters and gate voltage.
ASJC Scopus subject areas
- Physics and Astronomy(all)