Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

J. S. Park, T. Saraya, K. Miyaji, K. Shimizu, A. Higo, K. Takahashi, Y. H. Yi, H. Toshiyoshi, T. Hirarnoto

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

    Original languageEnglish
    Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
    DOIs
    Publication statusPublished - 2008 Dec 1
    EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
    Duration: 2008 Jun 152008 Jun 16

    Publication series

    NameIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

    Other

    OtherIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
    CountryUnited States
    CityHonolulu, HI
    Period08/6/1508/6/16

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Park, J. S., Saraya, T., Miyaji, K., Shimizu, K., Higo, A., Takahashi, K., Yi, Y. H., Toshiyoshi, H., & Hirarnoto, T. (2008). Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418442] (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418442