CHARACTERISATION OF THERMAL INSTABILITY IN GaAs-AlAs AND GaAs-InAs SUPERLATTICES WITH LASER RAMAN SPECTROSCOPY.

K. Kakimoto, H. Ohno, R. Katsumi, Y. Abe, H. Hasegawa, T. Katoda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Thermal instability of GaAs-AlAs and GaAs-InAs superlattices was studied by Raman spectroscopy. Samples with various periods and grown at various temperatures were investigated to understand the stability of interface in superlattice and to obtain an activation energy of mixing by thermal annealing. Mixing occurred more easily in GaAs-InAs strained superlattice than GaAs-AlAs strain-free superlattice. Samples grown at a lower temperature are more stable against thermal annealing than those grown at a higher temperature.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages253-258
Number of pages6
Edition74
Publication statusPublished - 1985 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kakimoto, K., Ohno, H., Katsumi, R., Abe, Y., Hasegawa, H., & Katoda, T. (1985). CHARACTERISATION OF THERMAL INSTABILITY IN GaAs-AlAs AND GaAs-InAs SUPERLATTICES WITH LASER RAMAN SPECTROSCOPY. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 253-258). (Institute of Physics Conference Series; No. 74).