A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.
|Number of pages||3|
|Journal||IEE Proceedings I: Solid State and Electron Devices|
|Publication status||Published - 1981 Jan 1|
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