CHARACTERISATION OF Al/AlInAs/GaInAs HETEROSTRUCTURES.

D. V. Morgan; H. Ohno; C. E.C. Wood; W. J. Schaff; K. Board; L. F. Eastman

doi:10.1049/ip-i-1.1981.0036

CHARACTERISATION OF Al/AlInAs/GaInAs HETEROSTRUCTURES.

D. V. Morgan, H. Ohno, C. E.C. Wood, W. J. Schaff, K. Board, L. F. Eastman

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.

Original language	English
Pages (from-to)	141-143
Number of pages	3
Journal	IEE Proceedings I: Solid State and Electron Devices
Volume	128
Issue number	4
DOIs	https://doi.org/10.1049/ip-i-1.1981.0036
Publication status	Published - 1981 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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10.1049/ip-i-1.1981.0036

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title = "CHARACTERISATION OF Al/AlInAs/GaInAs HETEROSTRUCTURES.",

abstract = "A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.",

author = "Morgan, {D. V.} and H. Ohno and Wood, {C. E.C.} and Schaff, {W. J.} and K. Board and Eastman, {L. F.}",

year = "1981",

month = jan,

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doi = "10.1049/ip-i-1.1981.0036",

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AU - Morgan, D. V.

AU - Ohno, H.

AU - Wood, C. E.C.

AU - Schaff, W. J.

AU - Board, K.

AU - Eastman, L. F.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.

AB - A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.

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JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

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ER -

CHARACTERISATION OF Al/AlInAs/GaInAs HETEROSTRUCTURES.

Abstract

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