CHARACTERISATION OF Al/AlInAs/GaInAs HETEROSTRUCTURES.

D. V. Morgan, H. Ohno, C. E.C. Wood, W. J. Schaff, K. Board, L. F. Eastman

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A band model is presented for the metal/semiconductor barrier. The electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the heterostructure and a deep level situated 0. 41 ev below the conduction band of the AlInAs.

Original languageEnglish
Pages (from-to)141-143
Number of pages3
JournalIEE Proceedings I: Solid State and Electron Devices
Volume128
Issue number4
DOIs
Publication statusPublished - 1981 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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