TY - JOUR
T1 - Chapter 4 Epitaxial growth techniques
T2 - Low-temperature epitaxy
AU - Murota, J.
N1 - Funding Information:
The author thanks Drs. M. Sakuraba and T. Matsuura for helpful discussions. This study was partially supported by the Public Participation Program for the Promotion of Information Communications Technology R&D of the Telecommunications Advancement Organization of Japan and a Grant-in-Aid for Scientific Research on Priority Area "New Group Semiconductor: Control of Proporties and Application to Ultrahigh Speed Opto-Electronic Devices" (Area No. 739) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2001
Y1 - 2001
UR - http://www.scopus.com/inward/record.url?scp=13244262566&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13244262566&partnerID=8YFLogxK
U2 - 10.1016/S0080-8784(01)80182-4
DO - 10.1016/S0080-8784(01)80182-4
M3 - Article
AN - SCOPUS:13244262566
VL - 72
SP - 127
EP - 149
JO - Semiconductors and Semimetals
JF - Semiconductors and Semimetals
SN - 0080-8784
IS - C
ER -