Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy

J. Murota

doi:10.1016/S0080-8784(01)80182-4

Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy

J. Murota

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	127-149
Number of pages	23
Journal	Semiconductors and Semimetals
Volume	72
Issue number	C
DOIs	https://doi.org/10.1016/S0080-8784(01)80182-4
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0080-8784(01)80182-4

Cite this

@article{8718145ef38245ca8c69c805ad54e4cc,

title = "Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy",

author = "J. Murota",

note = "Funding Information: The author thanks Drs. M. Sakuraba and T. Matsuura for helpful discussions. This study was partially supported by the Public Participation Program for the Promotion of Information Communications Technology R&D of the Telecommunications Advancement Organization of Japan and a Grant-in-Aid for Scientific Research on Priority Area {"}New Group Semiconductor: Control of Proporties and Application to Ultrahigh Speed Opto-Electronic Devices{"} (Area No. 739) from the Ministry of Education, Science, Sports and Culture of Japan.",

year = "2001",

doi = "10.1016/S0080-8784(01)80182-4",

language = "English",

volume = "72",

pages = "127--149",

journal = "Semiconductors and Semimetals",

issn = "0080-8784",

publisher = "Academic Press Inc.",

number = "C",

}

TY - JOUR

T1 - Chapter 4 Epitaxial growth techniques

T2 - Low-temperature epitaxy

AU - Murota, J.

N1 - Funding Information: The author thanks Drs. M. Sakuraba and T. Matsuura for helpful discussions. This study was partially supported by the Public Participation Program for the Promotion of Information Communications Technology R&D of the Telecommunications Advancement Organization of Japan and a Grant-in-Aid for Scientific Research on Priority Area "New Group Semiconductor: Control of Proporties and Application to Ultrahigh Speed Opto-Electronic Devices" (Area No. 739) from the Ministry of Education, Science, Sports and Culture of Japan.

PY - 2001

Y1 - 2001

UR - http://www.scopus.com/inward/record.url?scp=13244262566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13244262566&partnerID=8YFLogxK

U2 - 10.1016/S0080-8784(01)80182-4

DO - 10.1016/S0080-8784(01)80182-4

M3 - Article

AN - SCOPUS:13244262566

VL - 72

SP - 127

EP - 149

JO - Semiconductors and Semimetals

JF - Semiconductors and Semimetals

SN - 0080-8784

IS - C

ER -

Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this