A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.
|Number of pages||3|
|Journal||Journal of vacuum science & technology|
|Publication status||Published - 1981 Jan 1|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA|
Duration: 1981 Jan 27 → 1981 Jan 29
ASJC Scopus subject areas