CHANNELING ANALYSIS OF MBE InAlAs/InGaAs INTERFACES.

D. V. Morgan, C. E.C. Wood, H. Ohno, L. F. Eastman

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

A discussion is presented of how the Rutherford backscattering/channeling techniques may be used to study the interfaces between InAlAs/InGaAs epitaxial layers.

Original languageEnglish
Pages (from-to)596-598
Number of pages3
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
Publication statusPublished - 1981 Jan 1
Externally publishedYes
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA
Duration: 1981 Jan 271981 Jan 29

ASJC Scopus subject areas

  • Engineering(all)

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