Abstract
We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.
Original language | English |
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Pages (from-to) | 409-411 |
Number of pages | 3 |
Journal | Journal of Superconductivity and Novel Magnetism |
Volume | 20 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 Aug |
Keywords
- (Ga,Mn)As
- Curie temperature
- Electric field-effect control of ferromagnetism
- Ferromagnetic semiconductor
- P-d Zener model
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics