Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

M. Endo; D. Chiba; Y. Nishitani; F. Matsukura; H. Ohno

doi:10.1007/s10948-007-0242-7

Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T _C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T _C of the layer.

Original language	English
Pages (from-to)	409-411
Number of pages	3
Journal	Journal of Superconductivity and Novel Magnetism
Volume	20
Issue number	6
DOIs	https://doi.org/10.1007/s10948-007-0242-7
Publication status	Published - 2007 Aug 1

Keywords

(Ga,Mn)As
Curie temperature
Electric field-effect control of ferromagnetism
Ferromagnetic semiconductor
P-d Zener model

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.",

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T1 - Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

AU - Endo, M.

AU - Chiba, D.

AU - Nishitani, Y.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2007/8/1

Y1 - 2007/8/1

N2 - We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.

AB - We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.

KW - (Ga,Mn)As

KW - Curie temperature

KW - Electric field-effect control of ferromagnetism

KW - Ferromagnetic semiconductor

KW - P-d Zener model

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JO - Journal of Superconductivity and Novel Magnetism

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