Channel thickness dependence of the magnetic properties in (Ga,Mn)As FET structures

M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.

Original languageEnglish
Pages (from-to)409-411
Number of pages3
JournalJournal of Superconductivity and Novel Magnetism
Issue number6
Publication statusPublished - 2007 Aug


  • (Ga,Mn)As
  • Curie temperature
  • Electric field-effect control of ferromagnetism
  • Ferromagnetic semiconductor
  • P-d Zener model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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