Channel profile control based on transient-enhanced-diffusion suppression by RTA for 0.18 μm single gate CMOS

A. Furukawa, A. Teramoto, S. Shimizu, Y. Abe, Y. Tokuda

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Significant effects of rapid thermal annealing treatment, which was inserted before the gate oxidation, on MOSFETs characteristics have been studied in detail. The reduction of the threshold voltage and the enhancement of the transconductance were achieved for NMOSFETs, whereas a shallow and high channel doping profile was obtained for PMOSFETs. These results, which are promising for constructing high-performance single gate CMOS devices, were interpreted in terms of the suppression of transient diffusion such as B outside diffusion and B segregation into the gate oxide, which were enhanced by residual damage induced by high energy ion implantation.

Original languageEnglish
Pages (from-to)87-88
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1997 Jun 101997 Jun 12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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