Significant effects of rapid thermal annealing treatment, which was inserted before the gate oxidation, on MOSFETs characteristics have been studied in detail. The reduction of the threshold voltage and the enhancement of the transconductance were achieved for NMOSFETs, whereas a shallow and high channel doping profile was obtained for PMOSFETs. These results, which are promising for constructing high-performance single gate CMOS devices, were interpreted in terms of the suppression of transient diffusion such as B outside diffusion and B segregation into the gate oxide, which were enhanced by residual damage induced by high energy ion implantation.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1997 Jun 10 → 1997 Jun 12
ASJC Scopus subject areas
- Electrical and Electronic Engineering